logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412648 B1

PDFFull Text
Date of Patent:
Aug. 09, 2016

Filed:

Jan. 11, 2016

Via patterning using multiple photo multiple etch

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jung-Hau Shiu, Hsin-Chu, TW;

Chung-Chi Ko, Hsin-Chu, TW;

Tze-Liang Lee, Hsin-Chu, TW;

Wen-Kuo Hsieh, Hsin-Chu, TW;

Yu-Yun Peng, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); H01L 21/0276 (2013.01); H01L 21/0332 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76879 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53233 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 2221/1021 (2013.01);
Abstract

A method includes forming a dielectric layer, forming a photo resist over the dielectric layer, forming a first mask layer over the photo resist, and forming a second mask layer over the first mask layer. A first-photo-first-etching is performed to form a first via pattern in the second mask layer, wherein the first-photo-first-etching stops on a top surface of the first mask layer. A second-photo-second-etching is performed to form a second via pattern in the second mask layer, wherein the second-photo-second-etching stops on the top surface of the first mask layer. The first mask layer is etched using the second mask layer as an etching mask. The photo resist and the dielectric layer are etched to simultaneously transfer the first via pattern and the second via pattern into the dielectric layer.

Find Patent Forward Citations

Shiu, Jung-Hau. (2016). Via patterning using multiple photo multiple etch (U.S. Patent No. 9412648). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9412648

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…