The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 09, 2016

Filed:

Apr. 09, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Shinya Morikita, Beaverton, OR (US);

Eiichi Nishimura, Miyagi, JP;

Fumiko Yamashita, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); B81C 1/00 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31133 (2013.01); B81C 1/00031 (2013.01); G03F 7/0002 (2013.01); H01J 37/32091 (2013.01); H01J 37/32577 (2013.01); H01L 21/0271 (2013.01); H01L 21/02118 (2013.01); H01L 21/02351 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); B81C 2201/0149 (2013.01);
Abstract

A pattern forming method of forming a pattern on an underlying layer of a target object includes forming a block copolymer layer, which includes a first polymer and a second polymer and is configured to be self-assembled, on the underlying layer; processing the target object to form a first region containing the first polymer and a second region containing the second polymer in the block copolymer layer; etching the second region partway in a thickness direction thereof in a capacitively coupled plasma processing apparatus after the processing of the target object; generating secondary electrons from an upper electrode of the plasma processing apparatus by applying a negative DC voltage to the upper electrode and irradiating the secondary electrons onto the target object, after the etching of the second region; and additionally etching the second region in the plasma processing apparatus after the irradiating of the secondary electrons.


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