The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Dec. 18, 2014
Development of high etch selective hardmask material by ion implantation into amorphous carbon films
Applied Materials, Inc., Santa Clara, CA (US);
Pramit Manna, Santa Clara, CA (US);
Abhijit Basu Mallick, Fremont, CA (US);
Ludovic Godet, Sunnyvale, CA (US);
Yongmei Chen, San Jose, CA (US);
Jun Xue, San Jose, CA (US);
Mukund Srinivasan, Fremont, CA (US);
Ellie Y. Yieh, San Jose, CA (US);
Srinivas D. Nemani, Sunnyvale, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.