The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
May. 14, 2012
Daesik Choi, Seoul, KR;
Joungin Yang, Seoul, KR;
Sang MI Park, Kyounggi-do, KR;
Wonil Kwon, Seoul, KR;
Yisu Park, Kyoungki-do, KR;
DaeSik Choi, Seoul, KR;
JoungIn Yang, Seoul, KR;
Sang Mi Park, Kyounggi-do, KR;
WonIl Kwon, Seoul, KR;
YiSu Park, Kyoungki-do, KR;
STATS ChipPAC Pte. Ltd., Singapore, SG;
Abstract
A semiconductor device has a substrate. An insulating layer is formed over a surface of the substrate. A semiconductor die is mounted over the surface of the substrate. A channel is formed in the insulating layer around the semiconductor die. An underfill material is deposited between the semiconductor die and the substrate and in the channel. A heat spreader is mounted over the semiconductor die with the heat spreader thermally connected to the substrate. A thermal interface material is formed over the semiconductor die. The underfill material is deposited between the semiconductor die and the substrate along a first edge of the semiconductor die and along a second edge of the semiconductor die opposite the first edge. The channel extends partially through the insulating layer formed over the substrate with the insulating layer maintaining coverage over the substrate within a footprint of the channel.