The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Mar. 28, 2012
Yasushi Taniguchi, Osaka, JP;
Shigeru Sankawa, Sr., Osaka, JP;
Kouji Arai, Nara, JP;
Hiroshi Tanabe, Nara, JP;
Ichiro Nakayama, Osaka, JP;
Naoshi Yamaguchi, Osaka, JP;
Yasushi Taniguchi, Osaka, JP;
Shigeru Sankawa, Sr., Osaka, JP;
Kouji Arai, Nara, JP;
Hiroshi Tanabe, Nara, JP;
Ichiro Nakayama, Osaka, JP;
Naoshi Yamaguchi, Osaka, JP;
Abstract
The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.