The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Oct. 31, 2013
Tokyo Electron Limited, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.