The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Aug. 08, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method and apparatus for mitigating printable native defects in an extreme ultra violet (EUV) mask substrate. In some embodiments, the method is performed by providing an EUV mask substrate having a multi-layer coating disposed over a low thermal expansion material. The sizes of one or more native defects within the EUV mask substrate are measured and printable native defects having a measured size that violates one or more sizing thresholds are identified. A position at which a patterned absorber material is to be formed over the multi-layer coating is determined. The position minimizes a number printable native defects that interact with EUV radiation during an EUV lithography process. By mitigating a number of printable native defects violating the one or more sizing thresholds, the process window of an EUV reticle formed from the EUV mask substrate is improved.