The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Sep. 13, 2012
Kazuyuki Kakuta, Tokyo, JP;
Toshihiko Onozuka, Tokyo, JP;
Shigeru Matsui, Tokyo, JP;
Yoshisada Ebata, Tokyp, JP;
Norio Hasegawa, Tokyo, JP;
Kazuyuki Kakuta, Tokyo, JP;
Toshihiko Onozuka, Tokyo, JP;
Shigeru Matsui, Tokyo, JP;
Yoshisada Ebata, Tokyp, JP;
Norio Hasegawa, Tokyo, JP;
HITACHI HIGH-TECHNOLOGIES CORPORATION, Tokyo, JP;
Abstract
A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer.