The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
May. 29, 2015
Tokyo Electron Limited, Tokyo, JP;
Ube Industries, Ltd., Ube-shi, Yamaguchi, JP;
Akira Shimizu, Nirasaki, JP;
Takahiro Miyahara, Nirasaki, JP;
Masashi Shirai, Ube, JP;
Shinichiro Sadaike, Ube, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
UBE INDUSTRIES, LTD., Ube-Shi, Yamaguchi, JP;
Abstract
A method of forming an SiCN film on a surface to be processed of an object, the method including: supplying an Si source gas containing an Si source into a processing chamber having the object accommodated therein; and supplying a gas containing a nitriding agent into the processing chamber after supplying the Si source gas, wherein a compound of nitrogen and carbon is used as the nitriding agent and wherein R, Rand Rin the compound of nitrogen and carbon are linear or branched alkyl groups having 1 to 8 carbon atoms, which may have hydrogen atoms or substituents. Therefore, the SiCN film can be formed while maintaining a satisfactory film forming rate even though the film forming temperature is lowered.