The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Jan. 22, 2015
Applied Materials, Inc., Santa Clara, CA (US);
He Ren, San Jose, CA (US);
Jang-Gyoo Yang, San Jose, CA (US);
Jonghoon Baek, San Jose, CA (US);
Anchuan Wang, San Jose, CA (US);
Soonam Park, Mountain View, CA (US);
Saurabh Garg, Santa Clara, CA (US);
Xinglong Chen, San Jose, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of etching exposed patterned heterogeneous structures is described and includes a remote plasma etch formed from a reactive precursor. The plasma power is pulsed rather than left on continuously. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents selectively remove one material faster than another. The etch selectivity results from the pulsing of the plasma power to the remote plasma region, which has been found to suppress the number of ionically-charged species that reach the substrate. The etch selectivity may also result from the presence of an ion suppression element positioned between a portion of the remote plasma and the substrate processing region.