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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9384982 B1

PDFFull Text
Date of Patent:
Jul. 05, 2016

Filed:

Dec. 30, 2013

Depositing material into high aspect ratio structures

Applicant:

Fei Company, Hillsboro, OR (US);

Inventors:

Sang Hoon Lee, Forest Grove, OR (US);

Jeffrey Blackwood, Portland, OR (US);

Stacey Stone, Brno, CZ;

Assignee:

FEI Company, Hillsboro, OR (US);

Attorneys:

John B. Kelly

Scheinberg & Associates, P.C.

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/26 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); C23C 16/04 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2605 (2013.01); C23C 16/045 (2013.01); C23C 16/047 (2013.01); H01L 21/0262 (2013.01); H01L 21/02115 (2013.01); H01L 21/02277 (2013.01); H01L 21/28556 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 21/0243 (2013.01); H01L 21/02636 (2013.01);
Abstract

A method is provided, along with a corresponding apparatus, for filling a high aspect ratio hole without voids or for producing high aspect ratio structures without voids. A beam having a diameter smaller than the diameter of the hole is directed into the hole to induced deposition beginning in the center region of the hole bottom. After an elongated structure is formed in the hole by the beam-induced deposition, a beam can then be scanned in a pattern at least as large as the hole diameter to fill the remainder of the hole. The high aspect ratio hole can then be cross-sectioned using an ion beam for observation without creating artefacts. When electron-beam-induced deposition is used, the electrons preferably have a high energy to reach the bottom of the hole, and the beam has a low current, to reduce spurious deposition by beam tails.

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