The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Oct. 08, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Shih-Hsien Chen, Zhubei, TW;
Hau-Yan Lu, Hsinchu, TW;
Liang-Tai Kuo, Zhudong Township, TW;
Chun-Yao Ko, Hsinchu, TW;
Felix Ying-Kit Tsui, Cupertino, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsin-Chu, TW;
Abstract
Memory cells and operation methods thereof are provided. A memory device includes a number of memory cells. Each of the memory cells includes a first transistor, a switch and a capacitor. The first transistor has a drain connected to a corresponding bit-line. The switch has a first terminal connected to a source of the first transistor and a second terminal coupled to a reference voltage. The capacitor has a first plate and a second plate, and the first plate of the capacitor is electrically connected to a gate of the first transistor. The second plate of the capacitor is connected to a corresponding word line. The switch is turned off when the memory cell is not selected to perform a write operation or a read operation.