The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Jun. 19, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Ching-Mei Hsu, Stanford, CA (US);
Nitin K. Ingle, San Jose, CA (US);
Hiroshi Hamana, Amagasaki, JP;
Anchuan Wang, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32357 (2013.01); H01L 21/302 (2013.01); H01L 21/306 (2013.01); H01L 21/308 (2013.01); H01L 21/311 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract
A method of etching carbon films on patterned heterogeneous structures is described and includes a gas phase etch using remote plasma excitation. The remote plasma excites a fluorine-containing precursor and an oxygen-containing precursor, the plasma effluents created are flowed into a substrate processing region. The plasma effluents etch the carbon film more rapidly than silicon, silicon nitride, silicon carbide, silicon carbon nitride and silicon oxide.
Published as: