The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 28, 2016

Filed:

Jun. 10, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Peng Xie, Sunnyvale, CA (US);

Ludovic Godet, Boston, MA (US);

Tristan Ma, Lexington, MA (US);

Joseph C. Olson, Beverly, MA (US);

Christopher Bencher, Cupertino, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 7/38 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
G03F 7/38 (2013.01); B82Y 10/00 (2013.01); G03F 7/20 (2013.01); G03F 7/70 (2013.01);
Abstract

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.


Find Patent Forward Citations

Loading…