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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9373627 B1

PDFFull Text
Date of Patent:
Jun. 21, 2016

Filed:

Jan. 19, 2015

Multiple-time programming memory cells and methods for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Ching-Hung Fu, Hsin-Chu, TW;

Chun-Yao Ko, Hsin-Chu, TW;

Tuo-Hsin Chien, Zhubei, TW;

Ting-Chen Hsu, Taichung, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

David Vu

Assistant Examiner:

Mouloucoulaye Inoussa

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); G11C 16/04 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/3205 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); G11C 16/0408 (2013.01); H01L 21/0223 (2013.01); H01L 21/265 (2013.01); H01L 21/28273 (2013.01); H01L 21/30604 (2013.01); H01L 21/32055 (2013.01); H01L 21/76205 (2013.01); H01L 21/76213 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 27/11517 (2013.01); H01L 27/11558 (2013.01); H01L 28/40 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 28/60 (2013.01);
Abstract

A method includes forming Shallow Trench Isolation (STI) regions to separate a first active region and a second active region of a semiconductor substrate from each other, etching a portion of the STI regions that contacts a sidewall of the second active region to form a recess, and implanting a top surface layer and a side surface layer of the second active region to form an implantation region. The side surface layer of the second active region extends from the sidewall of the second active region into the second active region. An upper portion of the top surface layer and an upper portion of the side surface layer are oxidized to form a capacitor insulator. A floating gate is formed to extend over the first active region and the second active region. The floating gate includes a portion extending into the recess.

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