The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Dec. 20, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;

Inventors:

I-Fan Lin, Hsinchu, TW;

Yi-Tang Lin, Hsinchu, TW;

Cheng-Hung Yeh, Miaoli County, TW;

Hsien-Hsin Sean Lee, Duluth, GA (US);

Chou-Kun Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/823821 (2013.01);
Abstract

Systems and methods are provided for fabricating a semiconductor structure including an inverter chain. An example semiconductor structure includes a first device layer, a second device layer, and one or more inter-layer connection structures. The first device layer is formed on a substrate and includes one or more first inverter structures. The second device layer is formed on the first device layer and includes one or more second inverter structures. The one or more inter-layer connection structures are configured to electrically connect to the first inverter structures and the second inverter structures.


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