The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 05, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Po-Cheng Shih, Hsin-Chu, TW;
Joung-Wei Liou, Zhudong, TW;
Chih-Hung Sun, Hsin-Chu, TW;
Chia-Cheng Chou, Keelung, TW;
Kuang-Yuan Hsu, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Interconnect structures and methods for forming the same are described. A method for forming an interconnect structure may include: forming a low-k dielectric layer over a substrate; forming an opening in the low-k dielectric layer; forming a conductor in the opening; forming a capping layer over the conductor; and forming an etch stop layer over the capping layer and the low-k dielectric layer, wherein the etch stop layer has a dielectric constant ranging from about 5.7 to about 6.8.