The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2016
Filed:
Feb. 11, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); G03F 7/20 (2006.01); H01L 21/308 (2006.01); H01L 21/027 (2006.01); G03F 7/00 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
G03F 7/20 (2013.01); G03F 7/0002 (2013.01); H01L 21/0274 (2013.01); H01L 21/3085 (2013.01); H01L 21/31058 (2013.01); H01L 21/31144 (2013.01);
Abstract
A film layer on a substrate of the wafer is patterned to form a first plurality of areas of the film layer and a second plurality of areas of the film layer. The first plurality of areas of the film layer is removed. The second plurality of areas of the film layer is kept on the substrate. A first portion of the film layer is kept on the substrate. A first edge of the first portion of the film layer is substantially near an edge of the wafer. The first portion of the film layer defines a boundary for the wafer.