The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
May. 22, 2012
Dominique Suhr, Chatenay Malabry, FR;
Vincent Mevellec, Chaville, FR;
Dominique Suhr, Chatenay Malabry, FR;
Vincent Mevellec, Chaville, FR;
ALCHIMER, Massy, FR;
Abstract
The invention proposes a method for forming a vertical electrical connection () in a layered semiconductor structure (), comprising the following steps: —providing () a layered semiconductor structure (), said layered semiconductor structure () comprising: —a support substrate () including an first surface () and a second surface (), —an insulating layer () overlying the first surface () of the support substrate (), and —at least one device structure () formed in the insulating layer (); and —drilling () a via () from the second surface of the support substrate () up to the device structure (), in order to expose the device structure (); characterized in that drilling () of the insulating layer is at least performed by wet etching ().