The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Oct. 22, 2014
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Yukio Inazuki, Joetsu, JP;
Toyohisa Sakurada, Joetsu, JP;
Hideo Kaneko, Joetsu, JP;
Takuro Kosaka, Joetsu, JP;
Kouhei Sasamoto, Joetsu, JP;
Assignee:
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/32 (2012.01); G03F 1/00 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/26 (2013.01); G03F 1/0046 (2013.01); G03F 1/0076 (2013.01); G03F 1/32 (2013.01); G03F 7/2002 (2013.01);
Abstract
A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film is provided. The phase shift film consists of Si and N, or Si, N and O, and is free of transition metals. The phase shift film has a thickness of 40-70 nm, offers a transmittance of 10-40% and a phase shift of 150-200° relative to light of wavelength up to 200 nm, and is resistant to cleaning chemicals.