The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Jun. 21, 2013
Infineon Technologies Ag, Neubiberg, DE;
Dorothea Werber, Munich, DE;
Frank Pfirsch, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Carsten Schaeffer, Annenheim, DE;
Volodymyr Komarnitskyy, Villach, AT;
Anton Mauder, Kolbermoor, DE;
Holger Schulze, Villach, AT;
Gerhard Miller, Penzing, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.