The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Nov. 14, 2014
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Simon Wang, Shanghai, CN;
Phil Wu, Shanghai, CN;
Victor Luo, Shanghai, CN;
Silver Xi, Shanghai, CN;
Jason Chang, Shanghai, CN;
Kevin Shi, Shanghai, CN;
Abstract
A method of selectively etching a semiconductor device and manufacturing a BSI image sensor device includes etching a doped silicon substrate with an HNA solution for a predetermined time duration to obtain an etching solution having a concentration Cof nitrite ions, etching the semiconductor device using the obtained etching solution. Etching the semiconductor device requires an initial concentration Cof nitride ions that is lower than C. The HNA solution comprises a hydrofluoric acid (HF), a nitric acid (HNO), and a acetic acid (CHCOOH). The BSI image sensor device will have a uniform thickness when etched using the thus obtained etching solution.