The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Oct. 14, 2015
Globalfoundries Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Xiuyu Cai, Niskayuna, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Ajey P. Jacob, Watervliet, NY (US);
Witold P. Maszara, Morgan Hill, CA (US);
Kangguo Cheng, Schenecdtady, NY (US);
Ali Khakifirooz, Mountain View, CA (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
International Business Machines Corporation, Armonk, NY (US);
Abstract
An illustrative method includes forming a FinFET device above structure comprising a semiconductor substrate, a first epi semiconductor material and a second epi semiconductor material that includes forming an initial fin structure that comprises portions of the semiconductor substrate, the first epi material and the second epi material, recessing a layer of insulating material such that a portion, but not all, of the second epi material portion of the initial fin structure is exposed so as to define a final fin structure, forming a gate structure above and around the final fin structure, removing the first epi material of the initial fin structure and thereby define an under-fin cavity under the final fin structure and substantially filling the under-fin cavity with a stressed material.