The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Aug. 26, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jagar Singh, Clifton Park, NY (US);
Andy Wei, Queensbury, NY (US);
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Manjunatha Prabhu, Malta, NY (US);
Anil Kumar, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 29/66477 (2013.01); H01L 29/78 (2013.01);
Abstract
There is set forth herein a field effect transistor (FET) configured as an ESD protection device. In one embodiment, the FET can be configured to operate in a snapback operating mode. The FET can include a semiconductor substrate, a gate formed on the substrate and a dummy gate formed on the substrate spaced apart from the gate.