The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2016

Filed:

Feb. 06, 2015
Applicant:

Siliconware Precision Industries Co., Ltd., Taichung, TW;

Inventors:

Chien-Feng Chan, Taichung, TW;

Mu-Hsuan Chan, Taichung, TW;

Chun-Tang Lin, Taichung, TW;

Yi-Che Lai, Taichung, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/00 (2006.01); H01L 23/488 (2006.01); H01L 21/441 (2006.01); H01L 21/56 (2006.01); H01L 23/14 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 21/441 (2013.01); H01L 21/56 (2013.01); H01L 23/488 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 23/145 (2013.01); H01L 23/147 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/81986 (2013.01); H01L 2224/83104 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/3512 (2013.01);
Abstract

A conductive bump structure used to be formed on a substrate having a plurality of bonding pads. The conductive bump structure includes a first metal layer formed on the bonding pads, a second metal layer formed on the first metal layer, and a third metal layer formed on the second metal layer. The second metal layer has a second melting point higher than a third melting point of the third metal layer. Therefore, a thermal compression bonding process is allowed to be performed to the third metal layer first so as to bond the substrate to another substrate, and then a reflow process can be performed to melt the second metal layer and the third metal layer into each other so as to form an alloy portion, thus avoiding cracking of the substrate.


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