The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2016
Filed:
Mar. 10, 2015
Invensas Corporation, San Jose, CA (US);
Cyprian Emeka Uzoh, San Jose, CA (US);
Charles G. Woychik, San Jose, CA (US);
Terrence Caskey, San Jose, CA (US);
Kishor V. Desai, Fremont, CA (US);
Huailiang Wei, Allen, TX (US);
Craig Mitchell, San Jose, CA (US);
Belgacem Haba, Saratoga, CA (US);
Invensas Corporation, San Jose, CA (US);
Abstract
A microelectronic component with circuitry includes a substrate (possibly semiconductor) having an opening in a top surface. The circuitry includes a conductive via (possibly metal) in the opening. The opening has a first sidewall of a first material, and the conductive via has a second sidewall of a second material (possibly metal). At least at one side of the opening, the first and second sidewalls are spaced from each other at the top surface of the substrate but the first and second sidewalls meet below the top surface of the substrate at a meeting location. Between the meeting location and the top surface of the substrate, the first and second sidewalls are separated by a third material (possibly foam) which is a dielectric different from the first material. The third material lowers thermal stress in case of thermal expansion compared to a structure in which the third material were replaced with the second material.