The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jan. 29, 2014
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Guy C. Wicker, Southfield, MI (US);
Fabio Pellizzer, Follina, IT;
Enrico Varesi, Milan, IT;
Agostino Pirovano, Corbetta, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); G11C 13/003 (2013.01); G11C 13/0004 (2013.01); H01L 27/2427 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); H01L 45/1246 (2013.01); H01L 45/141 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01); G11C 2213/76 (2013.01);
Abstract
A phase change memory may be formed of two vertically spaced layers of phase change material. An intervening dielectric may space the layers from one another along a substantial portion of their lateral extent. An opening may be provided in the intervening dielectric to allow the phase change layers to approach one another more closely. As a result, current density may be increased at this location, producing heating.