The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Feb. 12, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Ching-Feng Fu, Taichung, TW;
Yu-Chan Yen, Taipei, TW;
Chih-Hsin Ko, Kaohsiung, TW;
Chun-Hung Lee, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Hui-Cheng Chang, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 27/12 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/31144 (2013.01);
Abstract
A method of forming a MOSFET structure is provided. In the method, an epitaxial layer is formed. A cap layer is formed above the epitaxial layer. A first trench is formed above the epitaxial layer. A protection layer is deposited within the first trench. The protection layer is a material selected from the group consisting of germanium and silicon-germanium.