The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2016

Filed:

Dec. 02, 2014
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Kohei Sato, Kudamatsu, JP;

Kazunori Nakamoto, Kudamatsu, JP;

Yutaka Omoto, Hikari, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/683 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67069 (2013.01); H01J 37/32577 (2013.01); H01J 37/32697 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01); H01L 21/6833 (2013.01);
Abstract

In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.


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