The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Jul. 25, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Hsin-Wei Wu, Hsinchu, TW;
Tsun-Jen Chan, Pingzhen, TW;
Chun-Feng Nieh, Hsinchu, TW;
Hsing-Jui Lee, Hsinchu, TW;
Yu-Chi Fu, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01J 37/3171 (2013.01); H01L 21/02664 (2013.01); H01L 21/324 (2013.01);
Abstract
A method includes providing a semiconductor substrate, and performing an ion implantation process to a surface of the substrate. The ion implantation process includes intermittently applying an ion beam to the surface, and while applying the ion beam, applying a heating process with a heating temperature above a threshold level.