The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 10, 2016

Filed:

Oct. 15, 2010
Applicants:

Chetan Mahadeswaraswamy, Sunnyvale, CA (US);

Walter R. Merry, Sunnyvale, CA (US);

Sergio Fukuda Shoji, San Jose, CA (US);

Chunlei Zhang, Santa Clara, CA (US);

Yashaswini B. Pattar, Palo Alto, CA (US);

Duy D. Nguyen, Milpitas, CA (US);

Tina Tsong, San Jose, CA (US);

Shane C. Nevil, Livermore, CA (US);

Douglas A. Buchberger, Jr., Livermore, CA (US);

Fernando M. Silveira, Livermore, CA (US);

Brad L. Mays, San Jose, CA (US);

Kartik Ramaswamy, San Jose, CA (US);

Hamid Noorbakhsh, Fremont, CA (US);

Inventors:

Chetan Mahadeswaraswamy, Sunnyvale, CA (US);

Walter R. Merry, Sunnyvale, CA (US);

Sergio Fukuda Shoji, San Jose, CA (US);

Chunlei Zhang, Santa Clara, CA (US);

Yashaswini B. Pattar, Palo Alto, CA (US);

Duy D. Nguyen, Milpitas, CA (US);

Tina Tsong, San Jose, CA (US);

Shane C. Nevil, Livermore, CA (US);

Douglas A. Buchberger, Jr., Livermore, CA (US);

Fernando M. Silveira, Livermore, CA (US);

Brad L. Mays, San Jose, CA (US);

Kartik Ramaswamy, San Jose, CA (US);

Hamid Noorbakhsh, Fremont, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 21/30 (2006.01); G01R 31/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/306 (2006.01); C23F 1/00 (2006.01); H05H 1/00 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H05H 1/0081 (2013.01); H01J 37/32935 (2013.01);
Abstract

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.


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