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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9337056 B1

PDFFull Text
Date of Patent:
May. 10, 2016

Filed:

Feb. 16, 2015

Semiconductor device manufacturing method

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Rui Takahashi, Miyagi, JP;

Ryuuu Ishita, Miyagi, JP;

Kazuki Narishige, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Jiong-Ping Lu

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 21/02123 (2013.01); H01L 21/30621 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/32135 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01J 37/32091 (2013.01); H01J 37/32165 (2013.01); H01J 2237/334 (2013.01); H01L 27/11582 (2013.01);
Abstract

A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of Thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.

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