The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Jan. 17, 2014
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Su-Horng Lin, Hsinchu, TW;
Lin-Jung Wu, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a semiconductor structure. The semiconductor structure includes a substrate, a high k dielectric layer disposed over the substrate, and a gate layer over the high k dielectric layer. The high k dielectric layer is partially crystallized and comprising an average thickness of from about 10 Å to about 30 Å. Some embodiments of the present disclosure provide a method for manufacturing a semiconductor structure. The method includes (i) forming a high k dielectric layer with a thickness of from about 10 Å to about 30 Å over a substrate, (ii) forming a gate layer over the dielectric layer, and (iii) transforming at least a portion of the dielectric layer from a first phase to a second phase by microwave irradiation.