The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Nov. 26, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Chi-Ju Lee, Tainan, TW;
Yao-Chang Wang, Tainan, TW;
Nien-Ting Ho, Tainan, TW;
Chi-Mao Hsu, Tainan, TW;
Kuan-Cheng Su, Taipei, TW;
Main-Gwo Chen, Hsin-Chu, TW;
Hsiao-Kwang Yang, Hsinchu County, TW;
Fang-Hong Yao, New Taipei, TW;
Sheng-Huei Dai, Taitung County, TW;
Tzung-Lin Li, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
The present invention provides a metal gate structure which is formed in a trench of a dielectric layer. The metal gate structure includes a work function metal layer and a metal layer. The work function metal layer is disposed in the trench and comprises a bottom portion and a side portion, wherein a ratio between a thickness of the bottom portion and a thickness of the side portion is between 2 and 5. The trench is filled with the metal layer. The present invention further provides a method of forming the metal gate structure.