The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Feb. 06, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/66 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/32009 (2013.01); H01J 37/32449 (2013.01); H01J 37/32724 (2013.01); H01L 21/308 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76811 (2013.01); H01L 21/76813 (2013.01); H01L 21/76877 (2013.01); H01L 22/26 (2013.01); H01L 2221/1015 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.