The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 2016
Filed:
Mar. 03, 2011
Masaru Sasaki, Seidai, JP;
Kazuki Moyama, Amagasaki, JP;
Masaki Inoue, Seidai, JP;
Yoko Noto, Seidai, JP;
Masaru Sasaki, Seidai, JP;
Kazuki Moyama, Amagasaki, JP;
Masaki Inoue, Seidai, JP;
Yoko Noto, Seidai, JP;
TOKYO ELECTRON LIMITED, , JP;
Abstract
Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O, CO, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.