The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Aug. 19, 2013
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventors:
Bor-Shyang Liao, Kaohsiung, TW;
Tsung-Hsun Tsai, Chiayi County, TW;
Kuo-Chih Lai, Tainan, TW;
Pin-Hong Chen, Yunlin County, TW;
Chia-Chang Hsu, Kaohsiung, TW;
Shu-Min Huang, Tainan, TW;
Min-Chung Cheng, Chiayi County, TW;
Chun-Ling Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/322 (2006.01); H01L 21/283 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 21/28123 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/7833 (2013.01); H01L 29/7834 (2013.01); H01L 21/28518 (2013.01);
Abstract
A method for fabricating a semiconductor device is provided. The method includes the following steps. Firstly, a substrate having a nitride layer and a platinum (Pt)-containing nickel (Ni)-semiconductor compound layer is provided. Then the nitride layer and the Pt are removed in situ with a chemical solution including a sulfuric acid component and a phosphoric acid component.