The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
May. 24, 2013
Tokyo Electron Limited, Tokyo, JP;
Katsuhiko Komori, Nirasaki, JP;
Akinobu Kakimoto, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Nobuhiro Takahashi, Nirasaki, JP;
TOKYO ELECTRON LIMITED, , JP;
Abstract
A method of forming a silicon film includes a first film forming process, an etching process, a doping process, and a second film forming process. In the first film forming process, a silicon film doped with impurities containing boron is formed so as to embed a groove provided on an object to be processed. In the etching process, the silicon film formed in the first film forming process is etched. In the doping process, the silicon film etched in the etching process is doped with impurities containing boron. In the second film forming process, a silicon film doped with impurities containing boron is formed so as to embed the silicon film that is doped in the doping process.