The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Nov. 13, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Zhiqiang Wu, Chubei, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Wen-Hsing Hsieh, Taichung, TW;
Jon-Hsu Ho, New Taipei, TW;
Chih-Ching Wang, Jinhu Township, TW;
Ching-Fang Huang, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/78 (2006.01); H01L 29/36 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02362 (2013.01); H01L 21/0234 (2013.01); H01L 21/02123 (2013.01); H01L 21/02293 (2013.01); H01L 29/1054 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate.