The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2016
Filed:
Dec. 18, 2014
Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Zhenxing Zhang, Shanghai, CN;
Pei Xi, Shanghai, CN;
Lei Xiong, Shanghai, CN;
Jianpeng Wang, Shanghai, CN;
Ting Shi, Shanghai, CN;
Abstract
A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.