The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2016
Filed:
Dec. 05, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/10 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); C23C 14/35 (2006.01); H05K 1/03 (2006.01);
U.S. Cl.
CPC ...
H05K 3/107 (2013.01); C23C 14/358 (2013.01); H01L 21/02063 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/3105 (2013.01); H01L 21/76814 (2013.01); H01L 21/76826 (2013.01); H01L 21/76846 (2013.01); H01L 21/76855 (2013.01); H01L 23/5329 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01); H05K 1/0306 (2013.01); H05K 2201/0338 (2013.01);
Abstract
There is provided a Cu wiring forming method for forming a Cu wiring by filling Cu in a recess, which is formed in a predetermined pattern in a Si-containing film of a substrate. The Cu wiring forming method includes forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of the recess by chemical vapor deposition, forming a Cu film by a physical vapor deposition to fill the recess with the Cu film, and forming a Cu wiring in the recess by polishing the entire surface of the substrate by a chemical mechanical polishing.