The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Mar. 12, 2013
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Il Kwon Shim, Singapore, SG;

Jun Mo Koo, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/28 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/532 (2006.01); H01L 23/538 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 23/28 (2013.01); H01L 21/4853 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 23/3114 (2013.01); H01L 23/5328 (2013.01); H01L 23/5389 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/525 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/12105 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01);
Abstract

A semiconductor device has a semiconductor die and first insulating layer formed over the semiconductor die. A patterned trench is formed in the first insulating layer. A conductive ink is deposited in the patterned trench by disposing a stencil over the first insulating layer with an opening aligned with the patterned trench and depositing the conductive ink through the opening in the stencil into the patterned trench. Alternatively, the conductive ink is deposited by dispensing the conductive ink through a nozzle into the patterned trench. The conductive ink is cured by ultraviolet light at room temperature. A second insulating layer is formed over the first insulating layer and conductive ink. An interconnect structure is formed over the conductive ink. An encapsulant can be deposited around the semiconductor die. The patterned trench is formed in the encapsulant and the conductive ink is deposited in the patterned trench in the encapsulant.


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