The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Sep. 04, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/30 (2006.01); G03F 7/20 (2006.01); H01L 21/308 (2006.01); H01J 37/317 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/2037 (2013.01); H01J 37/3174 (2013.01); H01J 2237/30488 (2013.01); H01J 2237/31722 (2013.01); H01J 2237/31725 (2013.01); H01J 2237/31761 (2013.01); H01J 2237/31774 (2013.01);
Abstract
The present disclosure provides a method for electron-beam (e-beam) lithography patterning. The method includes forming a resist layer on a substrate; performing a first e-beam exposure process to the resist layer according to a first pattern; performing a second e-beam exposure process to the resist layer according to a second pattern, wherein the second patterned is overlapped to the first pattern on the resist layer; and developing the resist layer.