The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Oct. 31, 2013
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

En-Chiuan Liou, Tainan, TW;

Sho-Shen Lee, New Taipei, TW;

Wen-Liang Huang, Hsinchu, TW;

Chang-Mao Wang, Tainan, TW;

Kai-Lin Chuang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/68 (2012.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G03F 1/00 (2013.01); G03F 1/68 (2013.01);
Abstract

A photomask including first opaque patterns and second opaque patterns is provided. The first opaque patterns are distributed in a first plane defined in the photomask, while the second opaque patterns are disposed above the first opaque patterns and spaced apart from the first opaque patterns. In other words, the first opaque pattern and second opaque pattern are not distributed in the same plane.


Find Patent Forward Citations

Liou, En-Chiuan. (2016). Photomask and fabrication method thereof (U.S. Patent No. 9304389). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9304389

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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