The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Nov. 24, 2014
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Fabio Pellizzer, Boise, ID (US);

Giulio Albini, Boise, ID (US);

Stephen W. Russell, Boise, ID (US);

Max F. Hineman, Boise, ID (US);

Sanjay Rangan, Boise, ID (US);

Assignee:

INTEL CORPORATION, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); H01L 45/1253 (2013.01); H01L 45/1608 (2013.01); H01L 45/1666 (2013.01); H01L 45/1206 (2013.01); H01L 45/16 (2013.01);
Abstract

Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements of the plurality of PCM elements include a phase-change material layer, a first electrode layer disposed on the phase-change material layer and in direct contact with the phase-change material layer, and a second electrode layer disposed on the first electrode layer and in direct contact with the first electrode layer. Other embodiments may be described and/or claimed.


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