The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299745 B1

Expired

Date of Patent:

Mar. 29, 2016

Filed:

May. 08, 2014

Integrated circuits having magnetic tunnel junctions (mtj) and methods for fabricating the same

Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Xunyuan Zhang, Albany, NY (US);

Sean Xuan Lin, Watervliet, NY (US);

Kunaljeet Tanwar, Fremont, CA (US);

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:

Ingrassia Fisher & Lorenz, P.C.

Primary Examiner:

Tu-Tu Ho

Int. Cl.

CPC ...

H01L 21/02 (2006.01); H01L 27/22 (2006.01); H01L 43/12 (2006.01); H01L 43/08 (2006.01); H01L 43/02 (2006.01);

U.S. Cl.

CPC ...

H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);

Abstract

Integrated circuits with magnetic tunnel junction (MTJ) structures and methods for fabricating integrated circuits with MTJ structures are provided. An exemplary method for fabricating an integrated circuit includes forming a first conductive line in electrical connection with an underlying semiconductor device. The method exposes a surface of the first conductive line. Further, the method selectively deposits a conductive material on the surface of the first conductive line to form an electrode contact. The method includes forming a MTJ structure over the electrode contact.

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