The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9299580 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 29, 2016

Filed:

Aug. 19, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Byungkook Kong, San Ramon, CA (US);

Gene Lee, San Jose, CA (US);

Liming Yang, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/311 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

Embodiments of the present disclosure provide methods for forming features in a film stack that may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3D) stacking of semiconductor chips. In one example, a method of etching a material layer disposed on a substrate using synchronized RF pulses includes providing an etching gas mixture into a processing chamber having a film stack disposed on a substrate, synchronously pulsing a RF source power and a RF bias power into the etching gas mixture at a ratio of less than 0.5, and etching the film stack disposed on the substrate.


Find Patent Forward Citations

Kong, Byungkook. (2016). High aspect ratio plasma etch for 3d nand semiconductor applications (U.S. Patent No. 9299580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9299580

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