The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 15, 2013
Applicant:
Tel Fsi, Inc., Chaska, MN (US);
Inventors:
Jeffery W. Butterbaugh, Eden Prairie, MN (US);
Anthony S. Ratkovich, Bloomington, MN (US);
Assignee:
TEL FSI, Inc., Chaska, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/306 (2006.01); B81C 1/00 (2006.01); H01L 21/67 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); B81C 1/00539 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 21/6708 (2013.01); H01L 21/67075 (2013.01); H01L 29/66545 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract
A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGe(x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGe. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.