The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Oct. 04, 2011
Applicants:

Masataka Hoshino, Kanagawa, JP;

Junichi Kasai, Kanagawa, JP;

Kouichi Meguro, Kanagawa, JP;

Ryota Fukuyama, Kanagawa, JP;

Yasuhiro Shinma, Kanagawa, JP;

Koji Taya, Kanagawa, JP;

Masanori Onodera, Kanagawa, JP;

Naomi Masuda, Kanagawa, JP;

Inventors:

Masataka Hoshino, Kanagawa, JP;

Junichi Kasai, Kanagawa, JP;

Kouichi Meguro, Kanagawa, JP;

Ryota Fukuyama, Kanagawa, JP;

Yasuhiro Shinma, Kanagawa, JP;

Koji Taya, Kanagawa, JP;

Masanori Onodera, Kanagawa, JP;

Naomi Masuda, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 23/495 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 23/49575 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06551 (2013.01); H01L 2225/06555 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/15311 (2013.01);
Abstract

The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.


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