The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Oct. 31, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Yi-Lin Chuang, Taipei, TW;
Chun-Cheng Ku, Zhubei, TW;
Chin-Her Chien, Chung-Li, TW;
Wei-Pin Changchien, Taichung, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); G06F 17/50 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5072 (2013.01); G06F 17/5081 (2013.01); H01L 27/0207 (2013.01);
Abstract
A method of reducing an oxide definition (OD) density gradient in an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checking (DRC) rules associated with the placed layout. The method includes computing OD density in insertion regions from OD density information corresponding to the placed layout to identify an OD density gradient. The method further includes selecting and adding dummy cells to at least one insertion region to reduce the OD density gradient.